Modeling, design, assessment of a 0.4 μm SiGe bipolar VCSEL driver IC under γ -radiation

Paul Leroux, Wouter De Cock, Marco Van Uffelen, Michiel Steyaert

    Research outputpeer-review


    This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 μm, which is part of the device library in a commercial 0.35 μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

    Original languageEnglish
    Article number5204633
    Pages (from-to)1920-1925
    Number of pages6
    JournalIEEE transactions on nuclear Science
    Issue number4
    StatePublished - Aug 2009

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Nuclear Energy and Engineering
    • Electrical and Electronic Engineering

    Cite this