Modeling, design, assessment of a 0.4 μm SiGe bipolar VCSEL driver IC under γ -radiation

Paul Leroux; Wouter De Cock; Marco Van Uffelen; Michiel Steyaert

doi:10.1109/TNS.2009.2018840

Modeling, design, assessment of a 0.4 μm SiGe bipolar VCSEL driver IC under γ -radiation

Paul Leroux, Wouter De Cock, Marco Van Uffelen, Michiel Steyaert

Research output › peer-review

Abstract

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 μm, which is part of the device library in a commercial 0.35 μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Original language	English
Article number	5204633
Pages (from-to)	1920-1925
Number of pages	6
Journal	IEEE transactions on nuclear Science
Volume	56
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2009.2018840
State	Published - Aug 2009

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2009.2018840License: Unspecified

Cite this

@article{4772ccd65a0d460799fd793c0be0cffd,

title = "Modeling, design, assessment of a 0.4 μm SiGe bipolar VCSEL driver IC under γ -radiation",

abstract = "This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 μm, which is part of the device library in a commercial 0.35 μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.",

keywords = "Gamma-radiation, IC design, Radiation hard, SiGe HBT, Total dose effects, VCSEL driver",

author = "Paul Leroux and {De Cock}, Wouter and {Van Uffelen}, Marco and Michiel Steyaert",

year = "2009",

month = aug,

doi = "10.1109/TNS.2009.2018840",

language = "English",

volume = "56",

pages = "1920--1925",

journal = "IEEE transactions on nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Modeling, design, assessment of a 0.4 μm SiGe bipolar VCSEL driver IC under γ -radiation

AU - Leroux, Paul

AU - De Cock, Wouter

AU - Van Uffelen, Marco

AU - Steyaert, Michiel

PY - 2009/8

Y1 - 2009/8

N2 - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 μm, which is part of the device library in a commercial 0.35 μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

AB - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 μm, which is part of the device library in a commercial 0.35 μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

KW - Gamma-radiation

KW - IC design

KW - Radiation hard

KW - SiGe HBT

KW - Total dose effects

KW - VCSEL driver

UR - http://www.scopus.com/inward/record.url?scp=69549123008&partnerID=8YFLogxK

U2 - 10.1109/TNS.2009.2018840

DO - 10.1109/TNS.2009.2018840

M3 - Article

AN - SCOPUS:69549123008

SN - 0018-9499

VL - 56

SP - 1920

EP - 1925

JO - IEEE transactions on nuclear Science

JF - IEEE transactions on nuclear Science

IS - 4

M1 - 5204633

ER -