Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS

Wouter De Cock; Hans Versmissen; Paul Leroux; Marco Van Uffelen

doi:10.1109/RADECS.2009.5994553

Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS

Wouter De Cock, Hans Versmissen, Paul Leroux, Marco Van Uffelen

Research output › peer-review

Abstract

This paper presents an application of the VHDL-AMS modelling language to the characterisation of -radiation effects on bipolar transistors. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the γ-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35m SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.

Original language	English
Title of host publication	2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication	10th RADECS Conference, RADECS 2009
Pages	61-64
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS.2009.5994553
State	Published - 2009
Event	RADECS - 2009: 10th European Conference on Radiation Effects on Components and Systems - RADECS association - Radiation Effects on Components and Systems, Brugge Duration: 14 Sep 2009 → 18 Sep 2009

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	RADECS - 2009
Abbreviated title	RADECS
Country/Territory	Belgium
City	Brugge
Period	2009-09-14 → 2009-09-18

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2009.5994553License: Unspecified

Cite this

De Cock, W., Versmissen, H., Leroux, P., & Van Uffelen, M. (2009). Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 61-64). Article 5994553 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994553

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title = "Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS",

abstract = "This paper presents an application of the VHDL-AMS modelling language to the characterisation of -radiation effects on bipolar transistors. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the γ-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35m SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.",

keywords = "γ-radiation, Bipolar transistor, VHDL-AMS, BiCMOS",

author = "{De Cock}, Wouter and Hans Versmissen and Paul Leroux and {Van Uffelen}, Marco",

year = "2009",

doi = "10.1109/RADECS.2009.5994553",

language = "English",

isbn = "9781457704932",

series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

pages = "61--64",

booktitle = "2009 European Conference on Radiation and Its Effects on Components and Systems",

note = "RADECS - 2009 : 10th European Conference on Radiation Effects on Components and Systems, RADECS ; Conference date: 14-09-2009 Through 18-09-2009",

}

De Cock, W, Versmissen, H, Leroux, P & Van Uffelen, M 2009, Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS. in 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009., 5994553, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 61-64, RADECS - 2009, Brugge, Belgium, 2009-09-14. https://doi.org/10.1109/RADECS.2009.5994553

Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS. / De Cock, Wouter; Versmissen, Hans; Leroux, Paul et al.
2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 61-64 5994553 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

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T1 - Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS

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AU - Leroux, Paul

AU - Van Uffelen, Marco

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N2 - This paper presents an application of the VHDL-AMS modelling language to the characterisation of -radiation effects on bipolar transistors. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the γ-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35m SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.

AB - This paper presents an application of the VHDL-AMS modelling language to the characterisation of -radiation effects on bipolar transistors. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the γ-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35m SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.

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KW - Bipolar transistor

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De Cock W, Versmissen H, Leroux P, Van Uffelen M. Modelling of γ-radiation effects in bipolar transistors with VHDL-AMS. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 61-64. 5994553. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2009.5994553