This paper presents an application of the VHDL-AMS modelling language to the characterisation of gamma-radiation effects on bipolar transistors is presented. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the gamma-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35um SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.
|Title of host publication||European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2009|
|Place of Publication||Piscataway, NJ, United States|
|State||Published - 14 Sep 2009|
|Event||RADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems - RADEC association - Radiation Effects on Components and Systems, Brugge|
Duration: 14 Sep 2009 → 18 Sep 2009
|Conference||RADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems|
|Period||2009-09-14 → 2009-09-18|