Modelling of Gamma-Radiation Effects in Bipolar Transistors with VHDL-AMS

Wouter De Cock, Hans Versmissen, Paul Leroux, Marco Van Uffelen, Marc Schyns

    Research outputpeer-review


    This paper presents an application of the VHDL-AMS modelling language to the characterisation of gamma-radiation effects on bipolar transistors is presented. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the gamma-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35um SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.
    Original languageEnglish
    Title of host publicationEuropean Conference on Radiation and Its Effects on Components and Systems (RADECS), 2009
    Place of PublicationPiscataway, NJ, United States
    StatePublished - 14 Sep 2009
    EventRADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems - RADEC association - Radiation Effects on Components and Systems, Brugge
    Duration: 14 Sep 200918 Sep 2009


    ConferenceRADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems

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