Abstract
Most amorphous chalcogenides show p-type conduction. Their electrical properties are slightly affected by doping, which has been explained as the result of a strong pinning of the Fermi energy, E//F, near midgap by positively and negatively charged dangling bonds. In the literature a number of attempts have been described to increase the conductivity and to modify the conduction type by doping with various foreign atoms. In a first part of this contribution a brief review of the preparation and properties of chemically modified chalcogenide systems showing a p yields n transition will be presented. Depending on the way of preparation two classes of materials are considered: thin films deposited from the vapor phase and glasses quenched from the melt.
| Original language | English |
|---|---|
| Title of host publication | Phys of Disord Mater |
| Publisher | Plenum Press |
| Pages | 645-662 |
| Number of pages | 18 |
| ISBN (Print) | 0306420740 |
| State | Published - 1985 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering