Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC

Vanessa Vervisch, Fatima Issa, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Axel Klix, Anders Hallen, Andrej Kuznetsov, Mihai Lazar, Abdallah Lyoussi, Marc Schyns

    Research outputpeer-review

    Abstract

    In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.
    Original languageEnglish
    Title of host publicationIEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002
    Place of PublicationUnited States
    Pages1-5
    StatePublished - Dec 2013
    Event2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille
    Duration: 23 Jun 201328 Jun 2013

    Conference

    Conference2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
    Country/TerritoryFrance
    CityMarseille
    Period2013-06-232013-06-28

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