Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC

Vanessa Vervisch; Fatima Issa; Laurent Ottaviani; Dora Szalkai; Ludo Vermeeren; Axel Klix; Anders Hallen; Andrej Kuznetsov; Mihai Lazar; Abdallah Lyoussi; Marc Schyns

Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC

Vanessa Vervisch, Fatima Issa, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Axel Klix, Anders Hallen, Andrej Kuznetsov, Mihai Lazar, Abdallah Lyoussi, Marc Schyns

Research output › peer-review

Abstract

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.

Original language	English
Title of host publication	IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002
Place of Publication	United States
Pages	1-5
State	Published - Dec 2013
Event	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille Duration: 23 Jun 2013 → 28 Jun 2013

Conference

Conference	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Country/Territory	France
City	Marseille
Period	2013-06-23 → 2013-06-28

Cite this

@inproceedings{8cdcefedd1934d3baabbaba33eff7a0a,

title = "Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC",

abstract = "In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.",

keywords = "4H-SiC, electrical characterizations, ion implantation, neutron irradiation, pn junction",

author = "Vanessa Vervisch and Fatima Issa and Laurent Ottaviani and Dora Szalkai and Ludo Vermeeren and Axel Klix and Anders Hallen and Andrej Kuznetsov and Mihai Lazar and Abdallah Lyoussi and Marc Schyns",

note = "Score = 3; 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications : International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications ; Conference date: 23-06-2013 Through 28-06-2013",

year = "2013",

month = dec,

language = "English",

isbn = "978-1-4799-1047-2",

pages = "1--5",

booktitle = "IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002",

}

Vervisch, V, Issa, F, Ottaviani, L, Szalkai, D, Vermeeren, L, Klix, A, Hallen, A, Kuznetsov, A, Lazar, M, Lyoussi, A & Schyns, M 2013, Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC. in IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002. United States, pp. 1-5, 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Marseille, France, 2013-06-23.

TY - GEN

T1 - Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC

AU - Vervisch, Vanessa

AU - Issa, Fatima

AU - Ottaviani, Laurent

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Klix, Axel

AU - Hallen, Anders

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Lyoussi, Abdallah

A2 - Schyns, Marc

N1 - Score = 3

PY - 2013/12

Y1 - 2013/12

N2 - In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.

AB - In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.

KW - 4H-SiC

KW - electrical characterizations

KW - ion implantation

KW - neutron irradiation

KW - pn junction

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_134255

UR - http://knowledgecentre.sckcen.be/so2/bibref/11259

M3 - In-proceedings paper

SN - 978-1-4799-1047-2

SP - 1

EP - 5

BT - IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002

CY - United States

T2 - 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications

Y2 - 23 June 2013 through 28 June 2013

ER -