Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

Fatima Issa, Vanessa Vervisch, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Abdallah Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen, Marc Schyns

    Research outputpeer-review


    Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
    Original languageEnglish
    Title of host publicationMaterials Science Forum Vols. 778-780, doi:10.4028/
    Place of PublicationZürich, Switzerland
    StatePublished - Feb 2014
    EventInternational Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) - JAEA, AIST, CRIEPI, Miyazaki
    Duration: 29 Sep 20134 Oct 2013


    ConferenceInternational Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)

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