Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
|Title of host publication||Materials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046|
|Place of Publication||Zürich, Switzerland|
|State||Published - Feb 2014|
|Event||International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) - JAEA, AIST, CRIEPI, Miyazaki|
Duration: 29 Sep 2013 → 4 Oct 2013
|Conference||International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)|
|Period||2013-09-29 → 2013-10-04|