Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

Fatima Issa; Vanessa Vervisch; Laurent Ottaviani; Dora Szalkai; Ludo Vermeeren; Abdallah Lyoussi; Andrej Kuznetsov; Mihai Lazar; Axel Klix; Olivier Palais; Anders Hallen; Marc Schyns

Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

Fatima Issa, Vanessa Vervisch, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Abdallah Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen, Marc Schyns

Research output › peer-review

Abstract

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Original language	English
Title of host publication	Materials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046
Place of Publication	Zürich, Switzerland
Pages	1046-1049
State	Published - Feb 2014
Event	International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) - JAEA, AIST, CRIEPI, Miyazaki Duration: 29 Sep 2013 → 4 Oct 2013

Conference

Conference	International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
Country/Territory	Japan
City	Miyazaki
Period	2013-09-29 → 2013-10-04

Cite this

@inproceedings{8ba8c76b83b04a769cafa1d4f0ebb907,

title = "Nuclear Radiation Detectors based on 4H-SiC p+-n Junction",

abstract = "Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.",

keywords = "4H-SiC, implantation, thermal neutrons, pn diodes, leakage current, space charge region, neutron converter layer",

author = "Fatima Issa and Vanessa Vervisch and Laurent Ottaviani and Dora Szalkai and Ludo Vermeeren and Abdallah Lyoussi and Andrej Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and Anders Hallen and Marc Schyns",

note = "Score = 3; International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) ; Conference date: 29-09-2013 Through 04-10-2013",

year = "2014",

month = feb,

language = "English",

pages = "1046--1049",

booktitle = "Materials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046",

}

Issa, F, Vervisch, V, Ottaviani, L, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O, Hallen, A & Schyns, M 2014, Nuclear Radiation Detectors based on 4H-SiC p+-n Junction. in Materials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046. Zürich, Switzerland, pp. 1046-1049, International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Miyazaki, Japan, 2013-09-29.

TY - GEN

T1 - Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

AU - Issa, Fatima

AU - Vervisch, Vanessa

AU - Ottaviani, Laurent

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Lyoussi, Abdallah

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Hallen, Anders

A2 - Schyns, Marc

N1 - Score = 3

PY - 2014/2

Y1 - 2014/2

N2 - Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

AB - Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

KW - 4H-SiC

KW - implantation

KW - thermal neutrons

KW - pn diodes

KW - leakage current

KW - space charge region

KW - neutron converter layer

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_134256

UR - http://knowledgecentre.sckcen.be/so2/bibref/11260

M3 - In-proceedings paper

SP - 1046

EP - 1049

BT - Materials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046

CY - Zürich, Switzerland

T2 - International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)

Y2 - 29 September 2013 through 4 October 2013

ER -