On the 1/f noise of triple-gate field-effect transistors with high- k gate dielectric

N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, S. Put, Cor Claeys, Eddy Simoen

    Research outputpeer-review


    The low-frequency noise of triple-gate fin field-effect transistors (finFETs) fabricated on silicon-on-insulator (SOI) substrates, with HfO 2 or HfSiON gate stacks has been studied. In most cases, 1/ f γ noise has been observed with γ<1 for low frequencies f. It is shown that this type of noise can be ascribed to number fluctuations and scales with the effective device area. Based on a simple tunneling model, the noise spectral density has been converted to an oxide trap density profile, exhibiting a decay in Not for larger distances from the Si- SiO2 interface. This stands in contrast with planar bulk devices with a similar high- k gate stack and seems to be typical for the fin processing used, irrespective of further process details, like the use of selective epitaxial growth, strained SOI or strain-inducing cap layers.

    Original languageEnglish
    Article number032101
    JournalApplied Physics Letters
    Issue number3
    StatePublished - Jul 2009

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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