Abstract
The low-frequency noise of triple-gate fin field-effect transistors (finFETs) fabricated on silicon-on-insulator (SOI) substrates, with HfO 2 or HfSiON gate stacks has been studied. In most cases, 1/ f γ noise has been observed with γ<1 for low frequencies f. It is shown that this type of noise can be ascribed to number fluctuations and scales with the effective device area. Based on a simple tunneling model, the noise spectral density has been converted to an oxide trap density profile, exhibiting a decay in Not for larger distances from the Si- SiO2 interface. This stands in contrast with planar bulk devices with a similar high- k gate stack and seems to be typical for the fin processing used, irrespective of further process details, like the use of selective epitaxial growth, strained SOI or strain-inducing cap layers.
Original language | English |
---|---|
Article number | 032101 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 3 |
DOIs | |
State | Published - Jul 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)