Optical modulation spectroscopy in a-Si:H at room temperature

W. Grevendonk; J. Dauwen; G. J. Adriaenssens; G. Seynhaeve; H. Strauven; P. Nagels; J. Smeets

doi:10.1016/0038-1098(88)90389-4

Optical modulation spectroscopy in a-Si:H at room temperature

W. Grevendonk, J. Dauwen, G. J. Adriaenssens, G. Seynhaeve, H. Strauven, P. Nagels, J. Smeets

Research output › peer-review

Abstract

Optical Modulation Spectroscopy was studied at room temperature in three a-Si:H films with different deposition temperatures. The gap density of states is largely influenced by this parameter. The results may be explained with a sharp distribution of D° (neutral dangling bond) states and a broad distribution of D^- (negatively charged dangling bond) states.

Original language	English
Pages (from-to)	801-803
Number of pages	3
Journal	Solid State Communications
Volume	66
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(88)90389-4
State	Published - May 1988
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(88)90389-4

Cite this

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title = "Optical modulation spectroscopy in a-Si:H at room temperature",

abstract = "Optical Modulation Spectroscopy was studied at room temperature in three a-Si:H films with different deposition temperatures. The gap density of states is largely influenced by this parameter. The results may be explained with a sharp distribution of D° (neutral dangling bond) states and a broad distribution of D- (negatively charged dangling bond) states.",

author = "W. Grevendonk and J. Dauwen and Adriaenssens, {G. J.} and G. Seynhaeve and H. Strauven and P. Nagels and J. Smeets",

year = "1988",

month = may,

doi = "10.1016/0038-1098(88)90389-4",

language = "English",

volume = "66",

pages = "801--803",

number = "8",

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T1 - Optical modulation spectroscopy in a-Si:H at room temperature

AU - Grevendonk, W.

AU - Dauwen, J.

AU - Adriaenssens, G. J.

AU - Seynhaeve, G.

AU - Strauven, H.

AU - Nagels, P.

AU - Smeets, J.

PY - 1988/5

Y1 - 1988/5

N2 - Optical Modulation Spectroscopy was studied at room temperature in three a-Si:H films with different deposition temperatures. The gap density of states is largely influenced by this parameter. The results may be explained with a sharp distribution of D° (neutral dangling bond) states and a broad distribution of D- (negatively charged dangling bond) states.

AB - Optical Modulation Spectroscopy was studied at room temperature in three a-Si:H films with different deposition temperatures. The gap density of states is largely influenced by this parameter. The results may be explained with a sharp distribution of D° (neutral dangling bond) states and a broad distribution of D- (negatively charged dangling bond) states.

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DO - 10.1016/0038-1098(88)90389-4

M3 - Article

AN - SCOPUS:0024013499

SN - 0038-1098

VL - 66

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EP - 803

JO - Solid State Communications

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