Plasma-enhanced ALD of platinum with O2, N2 and NH3 plasmas

Delphine Longrie, Kilian Devloo-Casier, Davy Deduytsche, Sven Van Den Berghe, Kris Driesen, Christophe Detavernier

    Research outputpeer-review


    Platinum thin films were grown by plasma-enhanced atomic layer deposition (PEALD) using (methylcyclopentadienyl)- trimethylplatinum (MeCpPtMe3) as precursor and respectively an oxygen, nitrogen and ammonia plasma as reactant. For each process the film thickness was found to be linearly dependent on the number of reaction cycles. Saturation curves and temperature windows were defined and growth rates of 0.45 Å cycle-1, 0.30 Å cycle-1 and 0.40 Å cycle-1 were obtained for the oxygen, nitrogen and ammonia process respectively. All the films were metallic platinum, crystalline, uniform and closed, with low surface roughness and low impurity levels. At a pressure of 1 × 10-3 mbar, nucleation on SiO2 was remarkably faster with the NH3 and N2 processes than with the O2 process. In-situ OES and MS measurements showed a fundamental difference between the NH3 and N2 processes and the O2 process. Based on these measurements we propose a reaction mechanism for the N2 and NH 3 PEALD processes where nitrogen will unstably adsorb on the substrate during the plasma pulse and be used during the subsequent precursor pulse to remove part of the precursor ligands.

    Original languageEnglish
    Pages (from-to)Q123-Q129
    Number of pages7
    JournalECS Journal of Solid State Science and Technology
    Issue number6
    StatePublished - 2012


    FundersFunder number
    Euratom 7th Framework Programme239865

      ASJC Scopus subject areas

      • Electronic, Optical and Magnetic Materials

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