The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.
|Title of host publication||Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems|
|Place of Publication||New York, NY, United States|
|State||Published - 12 Sep 2007|
|Event||9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) - Deauville|
Duration: 10 Sep 2007 → 14 Sep 2007
|Conference||9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)|
|Period||2007-09-10 → 2007-09-14|