Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

S. Put; M. Qureshi; Eddy Simoen; S. Van Huylenbroeck; Rafael Venegas; C. Claeys; M. Van Uffelen; P. Leroux; F. Berghmans

doi:10.1109/RADECS.2007.5205523

Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

S. Put, M. Qureshi, Eddy Simoen, S. Van Huylenbroeck, Rafael Venegas, C. Claeys, M. Van Uffelen, P. Leroux, F. Berghmans

Research output › peer-review

Abstract

The effect of airgap deep trench isolation on the radiation behavior of a O.13μm NPN SiGe:C HOT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forwardmode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

Original language	English
Title of host publication	Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems
Place of Publication	New York, NY, United States
Pages	92-96
DOIs	https://doi.org/10.1109/RADECS.2007.5205523
State	Published - 2007
Event	RADECS - 2007: 9th European Conference on Radiation and Its Effects on Components and Systems - Deauville Duration: 10 Sep 2007 → 14 Sep 2007

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	RADECS - 2007
Country/Territory	France
City	Deauville
Period	2007-09-10 → 2007-09-14

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2007.5205523License: Unspecified

Cite this

Put, S., Qureshi, M., Simoen, E., Van Huylenbroeck, S., Venegas, R., Claeys, C., Van Uffelen, M., Leroux, P., & Berghmans, F. (2007). Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. In Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems (pp. 92-96). Article 5205523 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).. https://doi.org/10.1109/RADECS.2007.5205523

Put, S. ; Qureshi, M. ; Simoen, Eddy et al. / Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems. New York, NY, United States, 2007. pp. 92-96 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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title = "Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation",

abstract = "The effect of airgap deep trench isolation on the radiation behavior of a O.13μm NPN SiGe:C HOT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forwardmode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.",

keywords = "Deep trench isolation, Gamma irradiation heterojunction bipolar transistor, Proton irradiation",

author = "S. Put and M. Qureshi and Eddy Simoen and {Van Huylenbroeck}, S. and Rafael Venegas and C. Claeys and {Van Uffelen}, M. and P. Leroux and F. Berghmans",

note = "Score = 1; RADECS - 2007 : 9th European Conference on Radiation and Its Effects on Components and Systems ; Conference date: 10-09-2007 Through 14-09-2007",

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language = "English",

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Put, S, Qureshi, M, Simoen, E, Van Huylenbroeck, S, Venegas, R, Claeys, C, Van Uffelen, M, Leroux, P & Berghmans, F 2007, Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. in Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems., 5205523, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, New York, NY, United States, pp. 92-96, RADECS - 2007, Deauville, France, 2007-09-10. https://doi.org/10.1109/RADECS.2007.5205523

Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. / Put, S.; Qureshi, M.; Simoen, Eddy et al.
Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems. New York, NY, United States, 2007. p. 92-96 5205523 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

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AU - Qureshi, M.

AU - Simoen, Eddy

AU - Van Huylenbroeck, S.

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AU - Leroux, P.

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N2 - The effect of airgap deep trench isolation on the radiation behavior of a O.13μm NPN SiGe:C HOT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forwardmode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

AB - The effect of airgap deep trench isolation on the radiation behavior of a O.13μm NPN SiGe:C HOT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forwardmode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

KW - Deep trench isolation

KW - Gamma irradiation heterojunction bipolar transistor

KW - Proton irradiation

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Put S, Qureshi M, Simoen E, Van Huylenbroeck S, Venegas R, Claeys C et al. Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. In Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems. New York, NY, United States. 2007. p. 92-96. 5205523. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2007.5205523