Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

Sofie Put; M. Qureshi; Eddy Simoen; Stefaan Van Huylenbroeck; R. Venegas; Cor Claeys; Marco Van Uffelen; Paul Leroux; Francis Berghmans; Wouter De Cock

Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

Sofie Put, M. Qureshi, Eddy Simoen, Stefaan Van Huylenbroeck, R. Venegas, Cor Claeys, Marco Van Uffelen, Paul Leroux, Francis Berghmans, Wouter De Cock

Research output › peer-review

Abstract

The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

Original language	English
Title of host publication	Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems
Place of Publication	New York, NY, United States
Pages	92-96
State	Published - 12 Sep 2007
Event	9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) - Deauville Duration: 10 Sep 2007 → 14 Sep 2007

Conference

Conference	9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)
Country/Territory	France
City	Deauville
Period	2007-09-10 → 2007-09-14

Cite this

@inproceedings{1c03b8521c0d432faf4f848c5fe9e357,

title = "Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation",

abstract = "The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.",

keywords = "Deep trench isolation, Gamma irradiation Heterojunction Bipolar Transistor, Proton irradiation",

author = "Sofie Put and M. Qureshi and Eddy Simoen and {Van Huylenbroeck}, Stefaan and R. Venegas and Cor Claeys and {Van Uffelen}, Marco and Paul Leroux and Francis Berghmans and {De Cock}, Wouter",

note = "Score = 1; 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) ; Conference date: 10-09-2007 Through 14-09-2007",

year = "2007",

month = sep,

day = "12",

language = "English",

isbn = "978-1-4244-1704-9",

pages = "92--96",

booktitle = "Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems",

}

Put, S, Qureshi, M, Simoen, E, Van Huylenbroeck, S, Venegas, R, Claeys, C, Van Uffelen, M, Leroux, P, Berghmans, F & De Cock, W 2007, Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation. in Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems. New York, NY, United States, pp. 92-96, 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007), Deauville, France, 2007-09-10.

TY - GEN

T1 - Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

AU - Put, Sofie

AU - Qureshi, M.

AU - Simoen, Eddy

AU - Van Huylenbroeck, Stefaan

AU - Venegas, R.

AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

AU - Berghmans, Francis

A2 - De Cock, Wouter

N1 - Score = 1

PY - 2007/9/12

Y1 - 2007/9/12

N2 - The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

AB - The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

KW - Deep trench isolation

KW - Gamma irradiation Heterojunction Bipolar Transistor

KW - Proton irradiation

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_95974

UR - http://knowledgecentre.sckcen.be/so2/bibref/5680

M3 - In-proceedings paper

SN - 978-1-4244-1704-9

SP - 92

EP - 96

BT - Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems

CY - New York, NY, United States

T2 - 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

Y2 - 10 September 2007 through 14 September 2007

ER -