Abstract
The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.
Original language | English |
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Title of host publication | Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems |
Place of Publication | New York, NY, United States |
Pages | 92-96 |
State | Published - 12 Sep 2007 |
Event | 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) - Deauville Duration: 10 Sep 2007 → 14 Sep 2007 |
Conference
Conference | 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) |
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Country/Territory | France |
City | Deauville |
Period | 2007-09-10 → 2007-09-14 |