Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

S. Put, M. Qureshi, Eddy Simoen, S. Van Huylenbroeck, Rafael Venegas, C. Claeys, M. Van Uffelen, P. Leroux, F. Berghmans

    Research outputpeer-review


    The effect of airgap deep trench isolation on the radiation behavior of a O.13μm NPN SiGe:C HOT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forwardmode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

    Original languageEnglish
    Title of host publicationProceedings of the 9th European Conference on Radiation and its Effects on Components and Systems
    Place of PublicationNew York, NY, United States
    StatePublished - 2007
    EventRADECS - 2007: 9th European Conference on Radiation and Its Effects on Components and Systems - Deauville
    Duration: 10 Sep 200714 Sep 2007

    Publication series

    NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS


    ConferenceRADECS - 2007

    ASJC Scopus subject areas

    • Radiation
    • Electrical and Electronic Engineering

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