Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

Eddy Simoen; Sofie Put; Marco Van Uffelen; Paul Leroux; Cor Claeys; H Ohyama; R Kulkarni; R.D. Schrimpf; K.F. Galloway; Marc Schyns

Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

Eddy Simoen, Sofie Put, Marco Van Uffelen, Paul Leroux, Cor Claeys, H Ohyama, R Kulkarni, R.D. Schrimpf, K.F. Galloway, Marc Schyns

Research output › peer-review

Abstract

An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.

Original language	English
Title of host publication	Proc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
Place of Publication	Japan
Pages	67-72
State	Published - Dec 2008
Event	Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications - Tsukuba Duration: 15 Dec 2008 → 15 Dec 2008

Conference

Conference	Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
Country/Territory	Japan
City	Tsukuba
Period	2008-12-15 → 2008-12-15

Cite this

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title = "Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs",

abstract = "An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.",

keywords = "High mobility, Deep submicron Devices, Radiation Hardness",

author = "Eddy Simoen and Sofie Put and {Van Uffelen}, Marco and Paul Leroux and Cor Claeys and H Ohyama and R Kulkarni and R.D. Schrimpf and K.F. Galloway and Marc Schyns",

note = "Score = 1; Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications ; Conference date: 15-12-2008 Through 15-12-2008",

year = "2008",

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language = "English",

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booktitle = "Proc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications",

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Simoen, E, Put, S, Van Uffelen, M, Leroux, P, Claeys, C, Ohyama, H, Kulkarni, R, Schrimpf, RD, Galloway, KF & Schyns, M 2008, Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs. in Proc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications. Japan, pp. 67-72, Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications, Tsukuba, Japan, 2008-12-15.

TY - GEN

T1 - Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

AU - Simoen, Eddy

AU - Put, Sofie

AU - Van Uffelen, Marco

AU - Leroux, Paul

AU - Claeys, Cor

AU - Ohyama, H

AU - Kulkarni, R

AU - Schrimpf, R.D.

AU - Galloway, K.F.

A2 - Schyns, Marc

N1 - Score = 1

PY - 2008/12

Y1 - 2008/12

N2 - An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.

AB - An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.

KW - High mobility

KW - Deep submicron Devices

KW - Radiation Hardness

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97109

UR - http://knowledgecentre.sckcen.be/so2/bibref/5778

M3 - In-proceedings paper

SP - 67

EP - 72

BT - Proc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications

CY - Japan

T2 - Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications

Y2 - 15 December 2008 through 15 December 2008

ER -