Radiation Silicon Carbide Detectors Based on Ion

Fatima Issa, Vanessa Vervisch, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Abdallah Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen, Willem Leysen

    Research outputpeer-review


    Radiation detectors based on radiation-hardened semiconductor such as silicon carbide, have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ layer, and then implanted by boron ( 10B) to realize the NCL. The second type was based on p+ epitaxial layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.
    Original languageEnglish
    Pages (from-to)2105-2111
    JournalIEEE transactions on nuclear Science
    Issue number4
    StatePublished - Aug 2014

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