Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

Fatima Issa; Laurent Ottaviani; Vanessa Vervisch; Dora Szalkai; Ludo Vermeeren; Abdallah Lyoussi; Andrej Kuznetsov; Mihai Lazar; Axel Klix; Olivier Palais; Anders Hallen; Marc Schyns

Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

Fatima Issa, Laurent Ottaviani, Vanessa Vervisch, Dora Szalkai, Ludo Vermeeren, Abdallah Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen, Marc Schyns

Research output › peer-review

Abstract

Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

Original language	English
Title of host publication	IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997
Place of Publication	United States
Pages	1-5
State	Published - Dec 2013
Event	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille Duration: 23 Jun 2013 → 28 Jun 2013

Conference

Conference	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Country/Territory	France
City	Marseille
Period	2013-06-23 → 2013-06-28

Cite this

Issa, Fatima ; Ottaviani, Laurent ; Vervisch, Vanessa ; Szalkai, Dora ; Vermeeren, Ludo ; Lyoussi, Abdallah ; Kuznetsov, Andrej ; Lazar, Mihai ; Klix, Axel ; Palais, Olivier ; Hallen, Anders ; Schyns, Marc. / Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, 2013. pp. 1-5

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title = "Radiation Silicon Carbide Detectors based on Ion Implantation of Boron",

abstract = "Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.",

keywords = "diode, pn junction, silicon carbide, space charge region, thermal neutrons",

author = "Fatima Issa and Laurent Ottaviani and Vanessa Vervisch and Dora Szalkai and Ludo Vermeeren and Abdallah Lyoussi and Andrej Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and Anders Hallen and Marc Schyns",

note = "Score = 3; 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications : International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications ; Conference date: 23-06-2013 Through 28-06-2013",

year = "2013",

month = dec,

language = "English",

isbn = "978-1-4799-1047-2",

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booktitle = "IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997",

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Issa, F, Ottaviani, L, Vervisch, V, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O, Hallen, A & Schyns, M 2013, Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. in IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, pp. 1-5, 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Marseille, France, 2013-06-23.

Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. / Issa, Fatima; Ottaviani, Laurent; Vervisch, Vanessa; Szalkai, Dora; Vermeeren, Ludo; Lyoussi, Abdallah; Kuznetsov, Andrej; Lazar, Mihai; Klix, Axel; Palais, Olivier; Hallen, Anders; Schyns, Marc (null).

IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, 2013. p. 1-5.

Research output › peer-review

TY - GEN

T1 - Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

AU - Issa, Fatima

AU - Ottaviani, Laurent

AU - Vervisch, Vanessa

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Lyoussi, Abdallah

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Hallen, Anders

A2 - Schyns, Marc

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PY - 2013/12

Y1 - 2013/12

N2 - Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

AB - Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

KW - diode

KW - pn junction

KW - silicon carbide

KW - space charge region

KW - thermal neutrons

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BT - IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997

CY - United States

T2 - 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications

Y2 - 23 June 2013 through 28 June 2013

ER -