Radiation silicon carbide detectors based on ion implantation of boron

F. Issa; L. Ottaviani; V. Vervisch; D. Szalkai; L. Vermeeren; A. Lyoussi; A. Kuznetsov; M. Lazar; A. Klix; O. Palais; A. Hallen

doi:10.1109/ANIMMA.2013.6727997

Radiation silicon carbide detectors based on ion implantation of boron

F. Issa, L. Ottaviani, V. Vervisch, D. Szalkai, L. Vermeeren, A. Lyoussi, A. Kuznetsov, M. Lazar, A. Klix, O. Palais, A. Hallen

Research output › peer-review

Abstract

Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

Original language	English
Title of host publication	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013
Place of Publication	United States
Pages	1-5
DOIs	https://doi.org/10.1109/ANIMMA.2013.6727997
State	Published - 2013
Event	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille Duration: 23 Jun 2013 → 28 Jun 2013

Publication series

Name	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013

Conference

Conference	2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Country/Territory	France
City	Marseille
Period	2013-06-23 → 2013-06-28

ASJC Scopus subject areas

Instrumentation

Access to Document

10.1109/ANIMMA.2013.6727997License: Unspecified

Cite this

Issa, F., Ottaviani, L., Vervisch, V., Szalkai, D., Vermeeren, L., Lyoussi, A., Kuznetsov, A., Lazar, M., Klix, A., Palais, O., & Hallen, A. (2013). Radiation silicon carbide detectors based on ion implantation of boron. In 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013 (pp. 1-5). Article 6727997 (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013).. https://doi.org/10.1109/ANIMMA.2013.6727997

Issa, F. ; Ottaviani, L. ; Vervisch, V. et al. / Radiation silicon carbide detectors based on ion implantation of boron. 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. United States, 2013. pp. 1-5 (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013).

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title = "Radiation silicon carbide detectors based on ion implantation of boron",

abstract = "Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.",

keywords = "Diode, Pn junction, Silicon carbide, Space charge region, Thermal neutrons",

author = "F. Issa and L. Ottaviani and V. Vervisch and D. Szalkai and L. Vermeeren and A. Lyoussi and A. Kuznetsov and M. Lazar and A. Klix and O. Palais and A. Hallen",

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Issa, F, Ottaviani, L, Vervisch, V, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O & Hallen, A 2013, Radiation silicon carbide detectors based on ion implantation of boron. in 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013., 6727997, 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, United States, pp. 1-5, 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Marseille, France, 2013-06-23. https://doi.org/10.1109/ANIMMA.2013.6727997

Radiation silicon carbide detectors based on ion implantation of boron. / Issa, F.; Ottaviani, L.; Vervisch, V. et al.
2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. United States, 2013. p. 1-5 6727997 (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013).

Research output › peer-review

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T1 - Radiation silicon carbide detectors based on ion implantation of boron

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AU - Ottaviani, L.

AU - Vervisch, V.

AU - Szalkai, D.

AU - Vermeeren, L.

AU - Lyoussi, A.

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AU - Palais, O.

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AB - Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

KW - Diode

KW - Pn junction

KW - Silicon carbide

KW - Space charge region

KW - Thermal neutrons

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Issa F, Ottaviani L, Vervisch V, Szalkai D, Vermeeren L, Lyoussi A et al. Radiation silicon carbide detectors based on ion implantation of boron. In 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. United States. 2013. p. 1-5. 6727997. (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013). doi: 10.1109/ANIMMA.2013.6727997