Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

Fatima Issa, Laurent Ottaviani, Vanessa Vervisch, Dora Szalkai, Ludo Vermeeren, Abdallah Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen, Marc Schyns

    Research outputpeer-review


    Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.
    Original languageEnglish
    Title of host publicationIEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997
    Place of PublicationUnited States
    StatePublished - Dec 2013
    Event2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille
    Duration: 23 Jun 201328 Jun 2013


    Conference2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications

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