Raman scattering measurements in neutron-irradiated silicon

M. Coeck; Christiane Laermans; R. Provoost; R. E. Silverans

doi:10.4028/www.scientific.net/msf.258-263.623

Raman scattering measurements in neutron-irradiated silicon

M. Coeck, Christiane Laermans, R. Provoost, R. E. Silverans

Research output › peer-review

Abstract

Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2×10²¹ n/cm² (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm^-1, indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.

Original language	English
Pages (from-to)	623-628
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.623
State	Published - 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/msf.258-263.623

Cite this

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title = "Raman scattering measurements in neutron-irradiated silicon",

abstract = "Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2×1021 n/cm2 (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm-1, indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.",

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AU - Coeck, M.

AU - Laermans, Christiane

AU - Provoost, R.

AU - Silverans, R. E.

PY - 1997

Y1 - 1997

N2 - Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2×1021 n/cm2 (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm-1, indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.

AB - Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2×1021 n/cm2 (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm-1, indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.

KW - Neutron-irradiation

KW - Radiation damage

KW - Raman scattering

KW - Silicon

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