Review of radiation effects in optoelectronic semiconductor materials and devices

Ivan Genchev

    Research outputpeer-review

    35 Downloads (Pure)

    Abstract

    Understanding the mechanisms of radiation damage in optoelectronic semiconductor compounds and devices is essential to assess the reliability of these materials and components for terrestrial nuclear of space applications. It would not only help to select the best component for a given application, but also to enhance the design of optoelectronic devices so as to mitigate the detrimental radiation effects. A wealth of information on radiation effect issues has already been reported and therefore we first attempt to review the literature on this topic with an emphasis on optoelectronic materials and devices. We limit ourselves to qualitative discussions and leave further details to the list of key documents cited as references. This document serves as a first PhD work progress report.
    Original languageEnglish
    PublisherSCK CEN
    StatePublished - 2004

    Publication series

    NameSCK•CEN Reports
    PublisherSCK CEN
    No.BLG-984
    ISSN (Print)1379-2407

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