Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Q. Xie; Y.L. Jiang; J. Musschoot; D. Deduytsche; C. Detavernier; R.L. Van Meirhaeghe; Sven Van den Berghe; G.P. Ru; B.Z. Li; X.P. Qu

doi:10.1016/j.tsf.2009.03.001

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Q. Xie, Y.L. Jiang, J. Musschoot, D. Deduytsche, C. Detavernier, R.L. Van Meirhaeghe, Sven Van den Berghe, G.P. Ru, B.Z. Li, X.P. Qu

Research output › peer-review

Abstract

Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)(2) and NH3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 mu Omega cm and a low root-mean-square roughness at a growth temperature of 270 degrees C. The thickness of the underlying TAN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.

Original language	English
Pages (from-to)	4689-4693
Journal	Thin Solid Films
Volume	517
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2009.03.001
State	Published - 30 Jun 2009

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Cite this

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title = "Ru thin film grown on TaN by plasma enhanced atomic layer deposition",

abstract = "Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)(2) and NH3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 mu Omega cm and a low root-mean-square roughness at a growth temperature of 270 degrees C. The thickness of the underlying TAN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.",

keywords = "Atomic layer deposition, Ru, Tatalum nitride, Diffusion barrier, X-ray diffraction, Transmission electron microscopy",

author = "Q. Xie and Y.L. Jiang and J. Musschoot and D. Deduytsche and C. Detavernier and {Van Meirhaeghe}, R.L. and {Van den Berghe}, Sven and G.P. Ru and B.Z. Li and X.P. Qu",

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year = "2009",

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doi = "10.1016/j.tsf.2009.03.001",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Ru thin film grown on TaN by plasma enhanced atomic layer deposition

AU - Xie, Q.

AU - Jiang, Y.L.

AU - Musschoot, J.

AU - Deduytsche, D.

AU - Detavernier, C.

AU - Van Meirhaeghe, R.L.

AU - Van den Berghe, Sven

AU - Ru, G.P.

AU - Li, B.Z.

AU - Qu, X.P.

N1 - Score = 10

PY - 2009/6/30

Y1 - 2009/6/30

N2 - Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)(2) and NH3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 mu Omega cm and a low root-mean-square roughness at a growth temperature of 270 degrees C. The thickness of the underlying TAN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.

AB - Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)(2) and NH3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 mu Omega cm and a low root-mean-square roughness at a growth temperature of 270 degrees C. The thickness of the underlying TAN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.

KW - Atomic layer deposition

KW - Ru

KW - Tatalum nitride

KW - Diffusion barrier

KW - X-ray diffraction

KW - Transmission electron microscopy

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_102345

UR - http://knowledgecentre.sckcen.be/so2/bibref/6492

U2 - 10.1016/j.tsf.2009.03.001

DO - 10.1016/j.tsf.2009.03.001

M3 - Article

SN - 0040-6090

VL - 517

SP - 4689

EP - 4693

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -