Si reactor damage monitors and their application

Seraphin De Leeuw, Albert Fabry, Romain Menil, Hugo Tourwe

    Research outputpeer-review

    6 Downloads (Pure)

    Abstract

    P.I.N. silicon diodes and quartz damage monitors are well suited to complement conventional flux-fluence monitors in the range Esub(n)>=100 keV. When using Si-P.I.N. diodes as fluence monitors an accuracy of 8 to 10% can be expected when Ksub(F) is determined from the characteristics of a large sample of the population. Better accuracy can be achieved by individually calibrating the diodes in a fission spectrum subsequent to irradiation in the unknown environment. Partial isothermal annealing of the diodes at 450C for 2 to 3 days minimises room temperature effects
    Original languageEnglish
    Title of host publicationDosimetry methods for fuels, cladding and structural materials
    Subtitle of host publicationProceedings of the third ASTM-Euratom symposium on reactor dosimetry : Ispra (Varese), Italy, 1 to 5 October 1979. Volume I
    PublisherPublications Office of the European Commission
    Pages93-107
    Volume1
    EditionEUR-6813
    ISBN (Print)92-825-1867-1
    StatePublished - 1980
    Event1979 - Third ASTM-Euratom symposium on reactor dosimetry - Ispra Varese
    Duration: 1 Oct 19795 Oct 1979

    Conference

    Conference1979 - Third ASTM-Euratom symposium on reactor dosimetry
    Country/TerritoryItaly
    CityIspra Varese
    Period1979-10-011979-10-05

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