SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels

Marco Van Uffelen; Sam Geboers; Paul Leroux; Francis Berghmans

doi:10.1109/TNS.2006.880949

SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels

Marco Van Uffelen, Sam Geboers, Paul Leroux, Francis Berghmans

Research output › peer-review

Abstract

Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 3 0% for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

Original language	English
Pages (from-to)	1945-1949
Journal	IEEE transactions on nuclear Science
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2006.880949
State	Published - Aug 2006
Event	Radiation and its Effects on Components and Systems (RADECS) - IEEE, Cap d'Agde Duration: 19 Sep 2005 → 23 Sep 2005

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10.1109/TNS.2006.880949License: Other

Cite this

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title = "SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels",

abstract = "Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 3 0% for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.",

keywords = "DC current gain, ionizing radiation, SiGe HBT, SPICE model",

author = "{Van Uffelen}, Marco and Sam Geboers and Paul Leroux and Francis Berghmans",

note = "Score = 10; Radiation and its Effects on Components and Systems (RADECS) ; Conference date: 19-09-2005 Through 23-09-2005",

year = "2006",

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AU - Van Uffelen, Marco

AU - Geboers, Sam

AU - Leroux, Paul

AU - Berghmans, Francis

N1 - Score = 10

PY - 2006/8

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AB - Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 3 0% for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

KW - DC current gain

KW - ionizing radiation

KW - SiGe HBT

KW - SPICE model

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M3 - Article

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JF - IEEE transactions on nuclear Science

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T2 - Radiation and its Effects on Components and Systems (RADECS)

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