SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels

M. Van Uffelen; S. Geboers; P. Leroux; F. Berghmans

doi:10.1109/RADECS.2005.4365604

SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels

M. Van Uffelen, S. Geboers, P. Leroux, F. Berghmans

Research output › peer-review

Abstract

Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 30 % for a base current of 100 μA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

Original language	English
Title of host publication	RADECS 2005
Subtitle of host publication	Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems
Pages	PF41-PF45
Number of pages	5
DOIs	https://doi.org/10.1109/RADECS.2005.4365604
State	Published - 2005
Event	2005 - RADECS: 8th European Conference on Radiation and Its Effects on Components and Systems - Université Montpellier, Cap d'Agde Duration: 19 Sep 2005 → 23 Sep 2005 https://ieeexplore.ieee.org/xpl/conhome/4365537/proceeding

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	2005 - RADECS
Country/Territory	France
City	Cap d'Agde
Period	2005-09-19 → 2005-09-23
Internet address	https://ieeexplore.ieee.org/xpl/conhome/4365537/proceeding

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2005.4365604License: Unspecified

Cite this

Van Uffelen, M., Geboers, S., Leroux, P., & Berghmans, F. (2005). SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. In RADECS 2005: Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems (pp. PF41-PF45). Article 4365604 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2005.4365604

Van Uffelen, M. ; Geboers, S. ; Leroux, P. et al. / SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. RADECS 2005: Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems. 2005. pp. PF41-PF45 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

@inproceedings{a82cccc024c845e8a3e3c3fe0de7a285,

title = "SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels",

abstract = "Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 30 % for a base current of 100 μA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.",

keywords = "DC current gain, Ionizing radiation, SiGe HBT, SPICE model",

author = "{Van Uffelen}, M. and S. Geboers and P. Leroux and F. Berghmans",

year = "2005",

doi = "10.1109/RADECS.2005.4365604",

language = "English",

isbn = "0780395018",

series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

pages = "PF41--PF45",

booktitle = "RADECS 2005",

note = "2005 - RADECS : 8th European Conference on Radiation and Its Effects on Components and Systems ; Conference date: 19-09-2005 Through 23-09-2005",

url = "https://ieeexplore.ieee.org/xpl/conhome/4365537/proceeding",

}

Van Uffelen, M, Geboers, S, Leroux, P & Berghmans, F 2005, SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. in RADECS 2005: Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems., 4365604, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. PF41-PF45, 2005 - RADECS, Cap d'Agde, France, 2005-09-19. https://doi.org/10.1109/RADECS.2005.4365604

SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. / Van Uffelen, M.; Geboers, S.; Leroux, P. et al.
RADECS 2005: Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems. 2005. p. PF41-PF45 4365604 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

TY - GEN

T1 - SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels

AU - Van Uffelen, M.

AU - Geboers, S.

AU - Leroux, P.

AU - Berghmans, F.

PY - 2005

Y1 - 2005

N2 - Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 30 % for a base current of 100 μA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

AB - Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 30 % for a base current of 100 μA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

KW - DC current gain

KW - Ionizing radiation

KW - SiGe HBT

KW - SPICE model

UR - http://www.scopus.com/inward/record.url?scp=48349086192&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2005.4365604

DO - 10.1109/RADECS.2005.4365604

M3 - In-proceedings paper

AN - SCOPUS:48349086192

SN - 0780395018

SN - 9780780395015

T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

SP - PF41-PF45

BT - RADECS 2005

T2 - 2005 - RADECS

Y2 - 19 September 2005 through 23 September 2005

ER -

Van Uffelen M, Geboers S, Leroux P, Berghmans F. SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. In RADECS 2005: Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems. 2005. p. PF41-PF45. 4365604. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2005.4365604