Stacking fault energy in silicon

Eddy Aerts; Pierre Delavignette; R. Siems; Severin Amelinckx

Stacking fault energy in silicon

Eddy Aerts, Pierre Delavignette, R. Siems, Severin Amelinckx

Research output › peer-review

Abstract

In hexagonal networks in the (111) plane of silicon both families of nodes are "extended". This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm² and ∼60 ergs/cm². It is not possible at present to decide which energy belongs to which stacking fault.Bot the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

Original language	English
Publisher	SCK CEN
Number of pages	6
State	Published - May 1962

Publication series

Name	SCK CEN Reports
Publisher	SCK CEN
No.	BLG-152

Cite this

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AU - Siems, R.

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N2 - In hexagonal networks in the (111) plane of silicon both families of nodes are "extended". This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Bot the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

AB - In hexagonal networks in the (111) plane of silicon both families of nodes are "extended". This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Bot the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

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T3 - SCK CEN Reports

BT - Stacking fault energy in silicon

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