Abstract
Neutron transmutation doping is one of the most precise techniques to dope silicon. Its main advantages include a high doping accurancy and homogenety. A drawback from industrial point of view is that due to the neuron irradiation, a lot of radiation damage is introduced, having a negative influence on the electronic properties such as the resistivity. This work deals with the study of neutron-inducecd defects and their annealing behaviour and the different factors which influence the quality of the material are studied. Positron annihilation measurements were used to study the main defects in neutron-irradiated silicon; divacancies. The clustering of the defects under annealing was studied and an indication for amorphization was found. The amorphous phase was also studied by Raman scattering spectroscopy unsing this technique an estimation of the amorphous volume fraction could be made and at low frequencies (for the first time) clear evidence was foound for the presence of a bason spectroscopy. The outcome of theis research contributes to the sill controversial question whethet tunneling states can be hosted by high coordinated disordered materials.
Original language | English |
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Qualification | Doctor of Science |
Awarding Institution |
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Supervisors/Advisors |
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Date of Award | 30 Jun 2023 |
Place of Publication | Leuven |
Publisher | |
State | Published - Jun 1998 |