Structural changes in silicon due to neutron-irradiation in the BR2 reactor: neutron transmutation doping and low-energy excitations in neutron-disordered bulk silicon

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    Abstract

    Neutron transmutation doping is one of the most precise techniques to dope silicon. Its main advantages include a high doping accurancy and homogenety. A drawback from industrial point of view is that due to the neuron irradiation, a lot of radiation damage is introduced, having a negative influence on the electronic properties such as the resistivity. This work deals with the study of neutron-inducecd defects and their annealing behaviour and the different factors which influence the quality of the material are studied. Positron annihilation measurements were used to study the main defects in neutron-irradiated silicon; divacancies. The clustering of the defects under annealing was studied and an indication for amorphization was found. The amorphous phase was also studied by Raman scattering spectroscopy unsing this technique an estimation of the amorphous volume fraction could be made and at low frequencies (for the first time) clear evidence was foound for the presence of a bason spectroscopy. The outcome of theis research contributes to the sill controversial question whethet tunneling states can be hosted by high coordinated disordered materials.
    Original languageEnglish
    QualificationDoctor of Science
    Awarding Institution
    • KU Leuven
    Supervisors/Advisors
    • Laermans, C., Supervisor
    • Ponsard, Bernard, SCK CEN Mentor
    Date of Award30 Jun 2023
    Place of PublicationLeuven
    Publisher
    StatePublished - Jun 1998

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