Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

E. Simoen; S. Put; N. Collaert; C. Claeys; V. Kilchytska; J. Alvarado; D. Flandre

doi:10.1149/1.3474140

Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

E. Simoen, S. Put, N. Collaert, C. Claeys, V. Kilchytska, J. Alvarado, D. Flandre

Research output › peer-review

2 Scopus citations

Abstract

A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on Silicon-on-Insulator (SOI) and strained SOI (sSOI) substrates. Both DC and low-frequency noise characteristics have been obtained in linear operation. It is shown that while a pronounced device-to-device variation can be noted, there is no clear impact of the strain on the radiation behavior.

Original language	English
Title of host publication	Microelectronics Technology and Devices, SBMicro 2010
Publisher	Electrochemical Society Inc.
Pages	43-50
Number of pages	8
Volume	31
Edition	1
ISBN (Electronic)	9781607681694
ISBN (Print)	9781566778190
DOIs	https://doi.org/10.1149/1.3474140
State	Published - 2010

Publication series

Name	ECS Transactions
Number	1
Volume	31
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3474140

Cite this

Simoen, E., Put, S., Collaert, N., Claeys, C., Kilchytska, V., Alvarado, J., & Flandre, D. (2010). Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise. In Microelectronics Technology and Devices, SBMicro 2010 (1 ed., Vol. 31, pp. 43-50). (ECS Transactions; Vol. 31, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3474140

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AU - Alvarado, J.

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