Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection.
|Title of host publication||Material Science Forum|
|Place of Publication||Pfaffikon, Switzerland|
|State||Published - Apr 2015|
|Event||European Conference on Silicon Carbide and Related Materials (ECSCRM) - Grenoble INP, Grenoble|
Duration: 21 Sep 2014 → 25 Sep 2014
|Conference||European Conference on Silicon Carbide and Related Materials (ECSCRM)|
|Period||2014-09-21 → 2014-09-25|