TY - JOUR
T1 - Texture of atomic layer deposited ruthenium
AU - Musschoot, Jan
AU - Xie, Q.
AU - Deduytsche, D.
AU - De Keyser, K.
AU - Longrie, D.
AU - Haemers, J.
AU - Van den Berghe, Sven
AU - Van Meirhaeghe, R.L.
AU - D'Haen, J.
AU - Detavernier, C.
A2 - Leenaers, Ann
N1 - Score = 10
PY - 2010/6
Y1 - 2010/6
N2 - Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very
smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films
on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.
AB - Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very
smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films
on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.
KW - Ruthenium
KW - Atomic layer deposition
KW - Texture
KW - Silicide
KW - Ammonia plasma
UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_106417
UR - http://knowledgecentre.sckcen.be/so2/bibref/7033
U2 - 10.1016/j.mee.2009.11.020
DO - 10.1016/j.mee.2009.11.020
M3 - Article
SN - 0167-9317
VL - 87
SP - 1879
EP - 1883
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 10
ER -