Texture of atomic layer deposited ruthenium

Jan Musschoot; Q. Xie; D. Deduytsche; K. De Keyser; D. Longrie; J. Haemers; Sven Van den Berghe; R.L. Van Meirhaeghe; J. D'Haen; C. Detavernier; Ann Leenaers

doi:10.1016/j.mee.2009.11.020

Texture of atomic layer deposited ruthenium

Jan Musschoot, Q. Xie, D. Deduytsche, K. De Keyser, D. Longrie, J. Haemers, Sven Van den Berghe, R.L. Van Meirhaeghe, J. D'Haen, C. Detavernier, Ann Leenaers

Research output › peer-review

Abstract

Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.

Original language	English
Pages (from-to)	1879-1883
Journal	Microelectronic Engineering
Volume	87
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2009.11.020
State	Published - Jun 2010

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Cite this

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title = "Texture of atomic layer deposited ruthenium",

abstract = "Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.",

keywords = "Ruthenium, Atomic layer deposition, Texture, Silicide, Ammonia plasma",

author = "Jan Musschoot and Q. Xie and D. Deduytsche and {De Keyser}, K. and D. Longrie and J. Haemers and {Van den Berghe}, Sven and {Van Meirhaeghe}, R.L. and J. D'Haen and C. Detavernier and Ann Leenaers",

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doi = "10.1016/j.mee.2009.11.020",

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AU - Musschoot, Jan

AU - Xie, Q.

AU - Deduytsche, D.

AU - De Keyser, K.

AU - Longrie, D.

AU - Haemers, J.

AU - Van den Berghe, Sven

AU - Van Meirhaeghe, R.L.

AU - D'Haen, J.

AU - Detavernier, C.

A2 - Leenaers, Ann

N1 - Score = 10

PY - 2010/6

Y1 - 2010/6

N2 - Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.

AB - Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.

KW - Ruthenium

KW - Atomic layer deposition

KW - Texture

KW - Silicide

KW - Ammonia plasma

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UR - http://knowledgecentre.sckcen.be/so2/bibref/7033

U2 - 10.1016/j.mee.2009.11.020

DO - 10.1016/j.mee.2009.11.020

M3 - Article

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

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