The critical voltage effect in transmission electron microscopy. V. The case of non‐centrosymmetric crystals

R. Serneels, M. David, R. Gevers

    Research outputpeer-review

    Abstract

    The critical voltage effect is discussed for the case of noncentrosymmetric crystals (systematic reflections only). An appropriate measure of the noncentrosymmetry is found in terms of the phase angles θg and θ2g of the lowest order extinction distances i.e. Δ = θ2g–2θg. When |Δ| ≦ 3° a critical voltage effect is still expected. For larger |Δ|‐values usually no critical voltage effect will occur. As an application the case is considered of interstitial alloys such as V2H, Nb2H, and Nb2O. For these alloys the critical voltage effect may be used to determine whether the H or O are in octahedral or tetrahedral interstitial positions.

    Original languageEnglish
    Pages (from-to)123-133
    Number of pages11
    JournalPhysica Status Solidi (B)
    Volume72
    Issue number1
    DOIs
    StatePublished - 1 Nov 1975

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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