Abstract
The critical voltage effect is discussed for the case of noncentrosymmetric crystals (systematic reflections only). An appropriate measure of the noncentrosymmetry is found in terms of the phase angles θg and θ2g of the lowest order extinction distances i.e. Δ = θ2g–2θg. When |Δ| ≦ 3° a critical voltage effect is still expected. For larger |Δ|‐values usually no critical voltage effect will occur. As an application the case is considered of interstitial alloys such as V2H, Nb2H, and Nb2O. For these alloys the critical voltage effect may be used to determine whether the H or O are in octahedral or tetrahedral interstitial positions.
Original language | English |
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Pages (from-to) | 123-133 |
Number of pages | 11 |
Journal | Physica Status Solidi (B) |
Volume | 72 |
Issue number | 1 |
DOIs | |
State | Published - 1 Nov 1975 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics