Abstract
The Hall coefficient and the conductivity of p- and n-type single crystals of SiC were measured as a function of temperature after succesive periods of exposure in the BR1 reactor.
The conductivity of p-type SiC decreases markedly upon fast neutron bombardment ; this effect is due to a decrease in free carrier concentration and in mobility. Continued exposure causes a conversion to n-type material, indicating that the predominant defect produced. by this bombardment is an effective donor state. The slope of the log R vs. 1/T curves measured after conversion, yields an ionization energy of approximately 0.20 eV for this donor level.
Bombardment of n-type SiC causes a decrease in the electron concentration resulting in a lowering of the conductivity ; the samples remained n-type after an exposure up to nvtf = 1.8 x 1017 neutrons.cm-2.
The relaxation processes of the defects during heat treatment have been studied employing the method of Balarin and Zetzsche.
The conductivity of p-type SiC decreases markedly upon fast neutron bombardment ; this effect is due to a decrease in free carrier concentration and in mobility. Continued exposure causes a conversion to n-type material, indicating that the predominant defect produced. by this bombardment is an effective donor state. The slope of the log R vs. 1/T curves measured after conversion, yields an ionization energy of approximately 0.20 eV for this donor level.
Bombardment of n-type SiC causes a decrease in the electron concentration resulting in a lowering of the conductivity ; the samples remained n-type after an exposure up to nvtf = 1.8 x 1017 neutrons.cm-2.
The relaxation processes of the defects during heat treatment have been studied employing the method of Balarin and Zetzsche.
| Original language | English |
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| Publisher | SCK CEN |
| Number of pages | 13 |
| State | Published - Jul 1964 |
Publication series
| Name | SCK CEN Reports |
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| Publisher | SCK CEN |
| No. | BLG-406 |