Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

Vanessa Vervisch; Fatima Issa; Stéphane Biondo; Laurent Ottaviani; Wilfried Vervisch; Dora Szalkai; Ludo Vermeeren; Axel Klix; Anders Hallen; Andrej Kuznetsov; Mihai Lazar; Abdallah Lyoussi

doi:10.1557/opl.2014.691

Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

Vanessa Vervisch, Fatima Issa, Stéphane Biondo, Laurent Ottaviani, Wilfried Vervisch, Dora Szalkai, Ludo Vermeeren, Axel Klix, Anders Hallen, Andrej Kuznetsov, Mihai Lazar, Abdallah Lyoussi

Research output › peer-review

2 Scopus citations

Abstract

The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Original language	English
Journal	Materials Research Society Symposium Proceedings
Volume	1693
DOIs	https://doi.org/10.1557/opl.2014.691
State	Published - 2014
Event	2014 MRS Spring Meeting - San Francisco Duration: 21 Apr 2014 → 25 Apr 2014

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2014.691

Cite this

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title = "Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor",

abstract = "The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.",

keywords = "devices, electrical properties, neutron irradiation",

author = "Vanessa Vervisch and Fatima Issa and St{\'e}phane Biondo and Laurent Ottaviani and Wilfried Vervisch and Dora Szalkai and Ludo Vermeeren and Axel Klix and Anders Hallen and Andrej Kuznetsov and Mihai Lazar and Abdallah Lyoussi",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 Materials Research Society.; 2014 MRS Spring Meeting ; Conference date: 21-04-2014 Through 25-04-2014",

year = "2014",

doi = "10.1557/opl.2014.691",

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T1 - Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

AU - Vervisch, Vanessa

AU - Issa, Fatima

AU - Biondo, Stéphane

AU - Ottaviani, Laurent

AU - Vervisch, Wilfried

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Klix, Axel

AU - Hallen, Anders

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Lyoussi, Abdallah

PY - 2014

Y1 - 2014

N2 - The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

AB - The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

KW - devices

KW - electrical properties

KW - neutron irradiation

UR - https://www.scopus.com/pages/publications/84924530110

U2 - 10.1557/opl.2014.691

DO - 10.1557/opl.2014.691

M3 - Article

AN - SCOPUS:84924530110

SN - 0272-9172

VL - 1693

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 2014 MRS Spring Meeting

Y2 - 21 April 2014 through 25 April 2014

ER -