Thermoelectric power due to variable-range hopping

Piet Nagels; Marc Rotti; Rudolf Gevers

doi:10.1016/0022-3093(83)90526-4

Thermoelectric power due to variable-range hopping

Piet Nagels, Marc Rotti, Rudolf Gevers

Research output › peer-review

Abstract

Starting from a general formula given by Cutler and Mott, the thermoelectric power S is calculated for the case of a highly disordered semiconductor having a band of localized energy levels, partially filled, near the middle of the mobility gap. The different approximations in solving this equation are discussed. Using the expression of the conductivity for variable-range hopping, it is shown that the thermoelectric power exhibits a simple temperature dependence of the form S/T ∝ T^-1/n+1, where n is the dimension of the system. The theory is applied to some results obtained on amorphous SiC.

Original language	English
Pages (from-to)	65-68
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	59-60
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(83)90526-4
State	Published - Dec 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0022-3093(83)90526-4

Cite this

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title = "Thermoelectric power due to variable-range hopping",

abstract = "Starting from a general formula given by Cutler and Mott, the thermoelectric power S is calculated for the case of a highly disordered semiconductor having a band of localized energy levels, partially filled, near the middle of the mobility gap. The different approximations in solving this equation are discussed. Using the expression of the conductivity for variable-range hopping, it is shown that the thermoelectric power exhibits a simple temperature dependence of the form S/T ∝ T-1/n+1, where n is the dimension of the system. The theory is applied to some results obtained on amorphous SiC.",

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AU - Gevers, Rudolf

PY - 1983/12

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AB - Starting from a general formula given by Cutler and Mott, the thermoelectric power S is calculated for the case of a highly disordered semiconductor having a band of localized energy levels, partially filled, near the middle of the mobility gap. The different approximations in solving this equation are discussed. Using the expression of the conductivity for variable-range hopping, it is shown that the thermoelectric power exhibits a simple temperature dependence of the form S/T ∝ T-1/n+1, where n is the dimension of the system. The theory is applied to some results obtained on amorphous SiC.

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