Ultrasonic velocity changes in bulk neutron-disordered silicon

M. Coeck; Christiane Laermans; E. Peeters

doi:10.1016/S0921-4526(98)01210-1

Ultrasonic velocity changes in bulk neutron-disordered silicon

M. Coeck, Christiane Laermans, E. Peeters

Research output › peer-review

Abstract

Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×10²¹ and 3.2×10²¹ n/cm² (E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.

Original language	English
Pages (from-to)	152-155
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	263-264
DOIs	https://doi.org/10.1016/S0921-4526(98)01210-1
State	Published - Mar 1999
Event	1998 - PHONONS: 9th International Conference on Phonon Scattering in Condensed Matter - Lancaster Duration: 26 Jul 1998 → 31 Jul 1998 Conference number: PHONONS 98

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(98)01210-1

Cite this

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title = "Ultrasonic velocity changes in bulk neutron-disordered silicon",

abstract = "Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×1021 and 3.2×1021 n/cm2 (E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.",

author = "M. Coeck and Christiane Laermans and E. Peeters",

year = "1999",

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doi = "10.1016/S0921-4526(98)01210-1",

language = "English",

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pages = "152--155",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "1998 - PHONONS : 9th International Conference on Phonon Scattering in Condensed Matter ; Conference date: 26-07-1998 Through 31-07-1998",

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AU - Laermans, Christiane

AU - Peeters, E.

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Y1 - 1999/3

N2 - Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×1021 and 3.2×1021 n/cm2 (E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.

AB - Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×1021 and 3.2×1021 n/cm2 (E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.

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DO - 10.1016/S0921-4526(98)01210-1

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JF - Physica B: Condensed Matter

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