Ultrathin GeOx Ny interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe, Junhu Liu, Christophe Detavernier

    Research outputpeer-review

    26 Scopus citations


    In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOx Ny interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2 (3 nm) / GeOx Ny (1nm) gate stacks. Gate leakage current density was below 5× 10-7 A/ cm2 at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOx Ny interlayer formed by in situ NH3 plasma treatment.

    Original languageEnglish
    Article number222902
    JournalApplied Physics Letters
    Issue number22
    StatePublished - 29 Nov 2010

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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