Ultrathin GeOx Ny interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie; Jan Musschoot; Marc Schaekers; Matty Caymax; Annelies Delabie; Xin-Ping Qu; Yu-Long Jiang; Sven Van den Berghe; Junhu Liu; Christophe Detavernier

doi:10.1063/1.3524208

Ultrathin GeO_x N_y interlayer formed by in situ NH₃ plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe, Junhu Liu, Christophe Detavernier

Research output › peer-review

26 Scopus citations

Abstract

In situ NH₃ plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeO_x N_y interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO₂ (3 nm) / GeO_x N_y (1nm) gate stacks. Gate leakage current density was below 5× 10^-7 A/ cm² at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeO_x N_y interlayer formed by in situ NH₃ plasma treatment.

Original language	English
Article number	222902
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3524208
State	Published - 29 Nov 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3524208

Cite this

@article{ae89e696fe12436e8edefd99fd85198f,

title = "Ultrathin GeOx Ny interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices",

abstract = "In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOx Ny interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2 (3 nm) / GeOx Ny (1nm) gate stacks. Gate leakage current density was below 5× 10-7 A/ cm2 at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOx Ny interlayer formed by in situ NH3 plasma treatment.",

keywords = "Dielectric devices, Electric fields, Germanium, Hafnium compounds, Leakage currents, MOS devices, Passivation, Plasma applications, Semiconductor device manufacture, Semiconductor devices",

author = "Qi Xie and Jan Musschoot and Marc Schaekers and Matty Caymax and Annelies Delabie and Xin-Ping Qu and Yu-Long Jiang and {Van den Berghe}, Sven and Junhu Liu and Christophe Detavernier",

note = "Funding Information: This work was supported by the Bilateral Scientific and Technological Corporation Project Flanders-China (Grant No. 01SB1809) and by the IWT-SBO Metacel Project. C.D. acknowledges the ERC for a starting grant.",

year = "2010",

month = nov,

day = "29",

doi = "10.1063/1.3524208",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP - American Institute of Physics",

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T1 - Ultrathin GeOx Ny interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

AU - Xie, Qi

AU - Musschoot, Jan

AU - Schaekers, Marc

AU - Caymax, Matty

AU - Delabie, Annelies

AU - Qu, Xin-Ping

AU - Jiang, Yu-Long

AU - Van den Berghe, Sven

AU - Liu, Junhu

AU - Detavernier, Christophe

N1 - Funding Information: This work was supported by the Bilateral Scientific and Technological Corporation Project Flanders-China (Grant No. 01SB1809) and by the IWT-SBO Metacel Project. C.D. acknowledges the ERC for a starting grant.

PY - 2010/11/29

Y1 - 2010/11/29

N2 - In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOx Ny interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2 (3 nm) / GeOx Ny (1nm) gate stacks. Gate leakage current density was below 5× 10-7 A/ cm2 at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOx Ny interlayer formed by in situ NH3 plasma treatment.

AB - In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOx Ny interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2 (3 nm) / GeOx Ny (1nm) gate stacks. Gate leakage current density was below 5× 10-7 A/ cm2 at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOx Ny interlayer formed by in situ NH3 plasma treatment.

KW - Dielectric devices

KW - Electric fields

KW - Germanium

KW - Hafnium compounds

KW - Leakage currents

KW - MOS devices

KW - Passivation

KW - Plasma applications

KW - Semiconductor device manufacture

KW - Semiconductor devices

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