In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOx Ny interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2 (3 nm) / GeOx Ny (1nm) gate stacks. Gate leakage current density was below 5× 10-7 A/ cm2 at VFB ±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOx Ny interlayer formed by in situ NH3 plasma treatment.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)