Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

Jonas Vande Pitte; Jan Wagemans; Inge Uytdenhouwen; Andrei Gusarov; C. Detavernier; Lauwaert j.

doi:10.1080/00295450.2019.1697172

Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

Jonas Vande Pitte, Jan Wagemans, Inge Uytdenhouwen, Andrei Gusarov, C. Detavernier, Lauwaert j.

Nuclear Systems Measurements

Research output › peer-review

Abstract

Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

Original language	English
Pages (from-to)	1-9
Number of pages	9
Journal	Nuclear Technology
DOIs	https://doi.org/10.1080/00295450.2019.1697172 https://doi.org/10.1080/00295450.2019.1697172
State	Published - 21 Jan 2020

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Cite this

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title = "Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon",

abstract = "Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.",

keywords = "Neutron absorption, neutron transmutation doping, silicon, resistivity, cadmium, hafnium",

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AU - Vande Pitte, Jonas

AU - Wagemans, Jan

AU - Uytdenhouwen, Inge

AU - Gusarov, Andrei

AU - Detavernier, C.

AU - j., Lauwaert

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AB - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

KW - Neutron absorption

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KW - cadmium

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