Abstract
Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.
Original language | English |
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Pages (from-to) | 562-565 |
Number of pages | 4 |
Journal | Diamond and Related Materials |
Volume | 9 |
Issue number | 3 |
DOIs | |
State | Published - 2000 |
Externally published | Yes |
Event | 1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague Duration: 12 Sep 1999 → 17 Sep 1999 |
Funding
This work was supported by the Bulgarian National Science Foundation (contract no. 540) and INCO–COPERNICUS Program, Contract SUPERCN, ERBIC 15CT 960757.
Funders | Funder number |
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Not added | 540 |
Not added | ERBIC 15CT 960757 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Mechanical Engineering
- General Physics and Astronomy
- Materials Chemistry
- Electrical and Electronic Engineering