X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment

Peter Petrov; Dimitar B. Dimitrov; Vesselin I. Krastev; Christo G. Georgiev; Cyril Popov

doi:10.1016/S0925-9635(99)00348-9

X-ray photoelectron spectroscopy characterization of CN_x thin films deposited by electron beam evaporation and nitrogen ion bombardment

Peter Petrov, Dimitar B. Dimitrov, Vesselin I. Krastev, Christo G. Georgiev, Cyril Popov

Research output › peer-review

Abstract

Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp³-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

Original language	English
Pages (from-to)	562-565
Number of pages	4
Journal	Diamond and Related Materials
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/S0925-9635(99)00348-9
State	Published - 2000
Externally published	Yes
Event	1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague Duration: 12 Sep 1999 → 17 Sep 1999

Funding

Funders	Funder number
Not added	540
Not added	ERBIC 15CT 960757

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
General Physics and Astronomy
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(99)00348-9

Cite this

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title = "X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment",

abstract = "Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27\% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.",

author = "Peter Petrov and Dimitrov, \{Dimitar B.\} and Krastev, \{Vesselin I.\} and Georgiev, \{Christo G.\} and Cyril Popov",

year = "2000",

doi = "10.1016/S0925-9635(99)00348-9",

language = "English",

volume = "9",

pages = "562--565",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

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note = "1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide ; Conference date: 12-09-1999 Through 17-09-1999",

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TY - JOUR

T1 - X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment

AU - Petrov, Peter

AU - Dimitrov, Dimitar B.

AU - Krastev, Vesselin I.

AU - Georgiev, Christo G.

AU - Popov, Cyril

PY - 2000

Y1 - 2000

N2 - Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

AB - Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

UR - https://www.scopus.com/pages/publications/0033729066

U2 - 10.1016/S0925-9635(99)00348-9

DO - 10.1016/S0925-9635(99)00348-9

M3 - Article

AN - SCOPUS:0033729066

SN - 0925-9635

VL - 9

SP - 562

EP - 565

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3

T2 - 1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide

Y2 - 12 September 1999 through 17 September 1999

ER -