X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment

Peter Petrov; Dimitar B. Dimitrov; Vesselin I. Krastev; Christo G. Georgiev; Cyril Popov

doi:10.1016/S0925-9635(99)00348-9

X-ray photoelectron spectroscopy characterization of CN_x thin films deposited by electron beam evaporation and nitrogen ion bombardment

Peter Petrov
, Dimitar B. Dimitrov
, Vesselin I. Krastev
, Christo G. Georgiev
, Cyril Popov

Research output › peer-review

Abstract

Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp³-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

Original language	English
Pages (from-to)	562-565
Number of pages	4
Journal	Diamond and Related Materials
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/S0925-9635(99)00348-9
State	Published - 2000
Externally published	Yes
Event	1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague Duration: 12 Sep 1999 → 17 Sep 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
General Physics and Astronomy
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(99)00348-9

Cite this

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title = "X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment",

abstract = "Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27\% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.",

author = "Peter Petrov and Dimitrov, \{Dimitar B.\} and Krastev, \{Vesselin I.\} and Georgiev, \{Christo G.\} and Cyril Popov",

year = "2000",

doi = "10.1016/S0925-9635(99)00348-9",

language = "English",

volume = "9",

pages = "562--565",

journal = "Diamond and Related Materials",

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note = "1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide ; Conference date: 12-09-1999 Through 17-09-1999",

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T1 - X-ray photoelectron spectroscopy characterization of CNx thin films deposited by electron beam evaporation and nitrogen ion bombardment

AU - Petrov, Peter

AU - Dimitrov, Dimitar B.

AU - Krastev, Vesselin I.

AU - Georgiev, Christo G.

AU - Popov, Cyril

PY - 2000

Y1 - 2000

N2 - Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

AB - Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers are tetrahedrally bonded and amorphous, consisting of sp3-coordinated carbon with one nitrogen atom between its nearest neighbors. About 27% of the nitrogen is in C-N bonds and some nitrogen is in C triple bond N bonds.

UR - https://www.scopus.com/pages/publications/0033729066

U2 - 10.1016/S0925-9635(99)00348-9

DO - 10.1016/S0925-9635(99)00348-9

M3 - Article

AN - SCOPUS:0033729066

SN - 0925-9635

VL - 9

SP - 562

EP - 565

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3

T2 - 1999 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide

Y2 - 12 September 1999 through 17 September 1999

ER -